Profiling of Vacancy Defects in Ion-Implanted Si by Slow...

Materials Science Forum 1986 Vol. 10-12

Profiling of Vacancy Defects in Ion-Implanted Si by Slow Positron Beam

Hautojärvi, Pekka J., Huomo, H., Lahtinen, J., Mäkinen, J.
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Volume:
10-12
Year:
1986
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.10-12.527
File:
PDF, 331 KB
1986
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