Formation of 10–30 nm SiO2/Si structure with a uniform thickness at ∼120 °C by nitric acid oxidation method
Asuha, Sung-Soon Im, Masato Tanaka, Shigeki Imai, Masao Takahashi, Hikaru KobayashiVolume:
600
Year:
2006
Language:
english
Pages:
5
DOI:
10.1016/j.susc.2006.04.015
File:
PDF, 258 KB
english, 2006