High Channel Mobility of MOSFET Fabricated on 4H-SiC...

Materials Science Forum 2009 Vol. 600-603

High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing

Endo, Takeshi, Okuno, Eiichi, Sakakibara, Toshio, Onda, Shoichi
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
600-603
Year:
2009
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.600-603.691
File:
PDF, 322 KB
english, 2009
Conversion to is in progress
Conversion to is failed