Structural, magnetic and electronic transport properties of MnxGe1−x/Ge(0 0 1) films grown by MBE at 350 °C
L. Morresi, J.P. Ayoub, N. Pinto, M. Ficcadenti, R. Murri, A. Ronda, I. Berbezier, F. D’Orazio, F. LucariVolume:
601
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.susc.2006.11.077
File:
PDF, 240 KB
english, 2007