Deformation Tests on 4H-SiC Single Crystals between 900°C...

Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples

Demenet, J.L., Hong, Moon Hi, Pirouz, P.
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Volume:
338-342
Year:
2000
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.338-342.517
File:
PDF, 409 KB
english, 2000
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