Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
C. Merckling, Y.C. Chang, C.Y. Lu, J. Penaud, G. Brammertz, M. Scarrozza, G. Pourtois, J. Kwo, M. Hong, J. Dekoster, M. Meuris, M. Heyns, M. CaymaxVolume:
605
Year:
2011
Language:
english
Pages:
6
DOI:
10.1016/j.susc.2011.06.008
File:
PDF, 826 KB
english, 2011