Dopant Deactivation and Electrically Active Defects Induced...

Solid State Phenomena 1991 / 1 Vol. 19-20

Dopant Deactivation and Electrically Active Defects Induced in Silicon by CF4 and CBrF3 Plasma Etching

Baryshev, Yu.P., Orlikovsky, A.A., Valiev, K.A., Zolotukhin, M.N.
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Volume:
19-20
Journal:
Solid State Phenomena
DOI:
10.4028/www.scientific.net/SSP.19-20.277
Date:
January, 1991
File:
PDF, 369 KB
1991
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