Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV...

Solid State Phenomena 2013 / 10 Vol. 205-206

Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and their Effect on Power JBS SiC Diode Characteristics

Hazdra, Pavel, Záhlava, Vít, Vobecký, Jan
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Volume:
205-206
Language:
english
Journal:
Solid State Phenomena
DOI:
10.4028/www.scientific.net/SSP.205-206.451
Date:
October, 2013
File:
PDF, 367 KB
english, 2013
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