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Chemical beam deposition of high- k gate dielectrics on III-V semiconductors: TiO2 on In0.53Ga0.47As
Engel-Herbert, Roman, Hwang, Yoontae, LeBeau, James, Zheng, Yan, Stemmer, SusanneVolume:
1155
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-1155-C13-02
Date:
January, 2009
File:
PDF, 3.54 MB
english, 2009