High Electrical Activation of Aluminium and Nitrogen...

Materials Science Forum 2001 Vol. 353-356

High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

Lazar, Mihaï, Ottaviani, Laurent, Locatelli, Marie Laure, Raynaud, Christophe, Planson, Dominique, Morvan, Erwan, Godignon, Phillippe, Skorupa, Wolfgang, Chante, Jean-Pierre
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Volume:
353-356
Year:
2001
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.353-356.571
File:
PDF, 446 KB
2001
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