Effect of Dopant Concentration on High Voltage 4H-SiC...

MRS Proceedings 2006 / 1 Vol. 911

Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes

La Via, Francesco, Galvagno, Giuseppa, Firrincieli, Andrea, Di Franco, Salvatore, Severino, Andrea, Leone, Stefano, Mauceri, Marco, Pistone, Giuseppe, Abbondanza, Giuseppe, Portuese, Ferdinando, Calca
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Volume:
911
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-0911-B10-02
Date:
January, 2006
File:
PDF, 86 KB
english, 2006
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