Sub 50nm Strained n-FETs Formed on...

MRS Proceedings 2007 / 1 Vol. 995

Sub 50nm Strained n-FETs Formed on Silicon-Germanium-on-Insulator Substrates and the Integration of Silicon Source/Drain Stressors

Wang, Grace Huiqi, Toh, Eng-Huat, Hoe, Keat-Mun, Tripathy, S., Lo, Guo-Qiang, Samudra, Ganesh, Yeo, Yee-Chia
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Volume:
995
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-0995-G03-04
Date:
January, 2007
File:
PDF, 589 KB
english, 2007
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