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Characteristics of ALD Tungsten Nitride Using B2H6, WF6, and NH3 and Application to Contact Barrier Layer for DRAM
Kim, Soo-Hyun, Kim, Jun-Ki, Lee, Ju Hee, Kwak, Nohjung, Kim, Jinwoong, Jung, Sung-Hoon, Hong, Mi-Ran, Lee, Sang Hyeob, Collins, Josh, Sohn, HyunchulVolume:
154
Year:
2007
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.2742913
File:
PDF, 1.07 MB
english, 2007