Evolution of Basal Plane Dislocations during 4H-SiC...

Materials Science Forum 2009 Vol. 600-603

Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth

Stahlbush, Robert E., VanMil, Brenda L., Liu, Kendrick X., Lew, Kok Keong, Myers Ward, Rachael L., Gaskill, D. Kurt, Eddy Jr., Charles R., Zhang, X., Skowronski, Marek
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
600-603
Year:
2009
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.600-603.317
File:
PDF, 1.60 MB
english, 2009
Conversion to is in progress
Conversion to is failed