A Model for the Critical Height for Dislocation Annihilation and Recombination in GaN Columns Deposited by Patterned Growth
Twigg, M. E., Bassim, N. D., Eddy, C. R., Henry, R. L., Holm, R. T., Mastro, M. A.Volume:
831
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-831-E11.29
Date:
January, 2004
File:
PDF, 178 KB
english, 2004