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Defect characterization of Tl4GaIn3Se2S6 layered single crystals by photoluminescence
Gasanly, N.M.Volume:
38
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2015.03.049
Date:
October, 2015
File:
PDF, 638 KB
english, 2015