MOCVD Growth of InAlAsSb Layer for High-Breakdown Voltage HEMT Applications
Yokoyama, Haruki, Sugiyama, Hiroki, Oda, Yasuhiro, Sato, Michio, Watanabe, Noriyuki, Kobayashi, TakashiVolume:
799
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-799-Z4.3
Date:
January, 2003
File:
PDF, 202 KB
english, 2003