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MOCVD Growth of InAlAsSb Layer for High-Breakdown Voltage...

MOCVD Growth of InAlAsSb Layer for High-Breakdown Voltage HEMT Applications

Yokoyama, Haruki, Sugiyama, Hiroki, Oda, Yasuhiro, Sato, Michio, Watanabe, Noriyuki, Kobayashi, Takashi
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Volume:
799
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-799-Z4.3
Date:
January, 2003
File:
PDF, 202 KB
english, 2003
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