Origin of the photoluminescence line at 0.8 eV in undoped...

Semiconductor Science and Technology 2002 / 01 Vol. 17; Iss. 1

Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE

Agert, Carsten, Gladkov, Peter S, Bett, Andreas W
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Volume:
17
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/17/1/307
Date:
January, 2002
File:
PDF, 202 KB
english, 2002
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