4H-SiC Bipolar Junction Transistors with Graded Base Doping...

Materials Science Forum 2009 Vol. 615-617

4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile

Zhang, Jian Hui, Fursin, Leonid, Li, Xue Qing, Wang, Xiao Hui, Zhao, Jian H., VanMil, Brenda L., Myers-Ward, Rachael L., Eddy Jr., Charles R., Gaskill, D. Kurt
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
615-617
Year:
2009
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.615-617.829
File:
PDF, 677 KB
english, 2009
Conversion to is in progress
Conversion to is failed