SIMS Investigation of Gex(4H-SiC)1-x Solid Solutions...

Materials Science Forum 2009 Vol. 615-617

SIMS Investigation of Gex(4H-SiC)1-x Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2

Peyre, Hervé, Pezoldt, Jörg, Voelskow, M., Skorupa, Wolfgang, Camassel, Jean
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Volume:
615-617
Year:
2009
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.615-617.465
File:
PDF, 454 KB
english, 2009
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