Oxygen-Related Defect Centers Observed in 4H/6H-SiC...

Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO2 Ambient

Klettke, O., Pensl, Gerhard, Kimoto, Tsunenobu, Matsunami, Hiroyuki
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Volume:
353-356
Year:
2001
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.353-356.459
File:
PDF, 332 KB
2001
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