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OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients
Nguyen, D.M., Raynaud, Christophe, Lazar, Mihai, Pâques, Gontran, Scharnholz, Sigo, Dheilly, Nicolas, Tournier, Dominique, Planson, DominiqueVolume:
717-720
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.717-720.545
Date:
May, 2012
File:
PDF, 296 KB
english, 2012