Effect of Post-oxidation-annealing in Hydrogen on SiO2/4H-SiC Interface
Suzuki, Seiji, Fukuda, Kenji, Okushi, Hideyo, Nagai, Kiyoko, Sekigawa, Toshihiro, Yoshida, Sadafumi, Tanaka, Tomoyuki, Arai, KazuoVolume:
338-342
Year:
2000
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.338-342.1073
File:
PDF, 299 KB
2000