Interstitial-Related Radiation Defects in Silicon Doped...

Solid State Phenomena 2004 Vol. 95-96

Interstitial-Related Radiation Defects in Silicon Doped with Tin and Germanium

Khirunenko, L.I., Kobzar, O.A., Pomozov, Yu.V., Sosnin, M.G., Tripachko, N.A., Abrosimov, N.V., Riemann, H.
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Volume:
95-96
Year:
2004
Language:
english
Journal:
Solid State Phenomena
DOI:
10.4028/www.scientific.net/SSP.95-96.393
File:
PDF, 241 KB
english, 2004
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