Band-gap engineering of the h-BN/MoS 2 /h-BN sandwich heterostructure under an external electric field
Huang, Zongyu, Qi, Xiang, Yang, Hong, He, Chaoyu, Wei, Xiaolin, Peng, Xiangyang, Zhong, JianxinVolume:
48
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/48/20/205302
Date:
May, 2015
File:
PDF, 1.06 MB
english, 2015