Simulation of Dislocation Accumulation in ULSI Cells of...

Materials Science Forum 2010 / 6 Vol. 654-656

Simulation of Dislocation Accumulation in ULSI Cells of Reduced Gate Length

Sato, Michihiro, Ohashi, Tetsuya, Aikawa, Keisuke, Maruizumi, Takuya, Kitagawa, Isao
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Volume:
654-656
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.654-656.1682
Date:
June, 2010
File:
PDF, 485 KB
english, 2010
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