PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate
Polychroniadis, E.K., Mantzari, A., Freudenberg, A., Wollweber, Jürgen, Nitschke, R., Frank, Thomas, Pensl, Gerhard, Schöner, AdolfVolume:
483-485
Year:
2005
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.483-485.319
File:
PDF, 480 KB
english, 2005