Lithography and doping in strained Si towards atomically...

Lithography and doping in strained Si towards atomically precise device fabrication

Lee, W C T, McKibbin, S R, Thompson, D L, Xue, K, Scappucci, G, Bishop, N, Celler, G K, Carroll, M S, Simmons, M Y
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Volume:
25
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/25/14/145302
Date:
April, 2014
File:
PDF, 1.31 MB
english, 2014
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