Nb-Doped $\hbox{La}_{2}\hbox{O}_{3} $ as Charge-Trapping Layer for Nonvolatile Memory Applications
Shi, Runpu, Huang, X. D., Leung, C. H., Sin, Johnny K. O., Lai, P. T.Volume:
15
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2014.2376514
Date:
March, 2015
File:
PDF, 899 KB
english, 2015