Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate...

Materials Science Forum 2009 Vol. 600-603

Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry

Yamamoto, Takeshi, Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi
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Volume:
600-603
Year:
2009
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.600-603.667
File:
PDF, 1.57 MB
english, 2009
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