Ferroelectric Properties of Lead-Free (Bi,La)4Ti3O12 Thin...

Materials Science Forum 2005 Vol. 486-487

Ferroelectric Properties of Lead-Free (Bi,La)4Ti3O12 Thin Film Deposited on MTP Cell Structure for High Density FeRAM Device

Cho, K.W., Kim, N.K., Oh, S.H., Choi, E.S., Sun, H.J., Yeom, S.J., Lee, K.N., Lee, Seoung Soo, Hong, Suk Kyoung, Choi, S.K., Hong, Tae Whan, Kim, Il Ho, Lee, J.I., Ur, Soon Chul, Lee, Young Geun, Ryu,
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Volume:
486-487
Year:
2005
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.486-487.285
File:
PDF, 796 KB
english, 2005
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