A Multi- $V_{\mathrm {th}}$ a-IGZO TFT Technology Using...

IEEE Electron Device Letters 2014 / 12 Vol. 35; Iss. 12

A Multi- $V_{\mathrm {th}}$ a-IGZO TFT Technology Using Anodization to Selectively Reduce Oxygen Vacancy Concentration in Channel Regions

He, Xin, Xiao, Xiang, Shao, Yang, Deng, Wei, Leng, Chuanli, Zhang, Shengdong
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2014.2359931
Date:
December, 2014
File:
PDF, 746 KB
english, 2014
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