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Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N[sub 2] and N[sub 2]O Plasma Post-Treatments
Kim, Hyungchul, Kim, Seokhoon, Woo, Sanghyun, Chung, Hye Yeong, Kim, Honggyu, Park, Jongsan, Jeon, HyeongtagVolume:
155
Year:
2008
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.2990702
File:
PDF, 266 KB
english, 2008