[IEEE 2014 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2014.12.15-2014.12.17)] 2014 IEEE International Electron Devices Meeting - Performance evaluation of InGaAs, Si, and Ge nFinFETs based on coupled 3D drift-diffusion/multisubband boltzmann transport equations solver
Jin, Seonghoon, Pham, Anh-Tuan, Woosung Choi,, Nishizawa, Yutaka, Young-Tae Kim,, Keun-Ho Lee,, Youngkwan Park,, Eun Seung Jung,Year:
2014
Language:
english
DOI:
10.1109/iedm.2014.7047005
File:
PDF, 639 KB
english, 2014