[IEEE 2014 IEEE International Electron Devices Meeting...

  • Main
  • [IEEE 2014 IEEE International Electron...

[IEEE 2014 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2014.12.15-2014.12.17)] 2014 IEEE International Electron Devices Meeting - Performance evaluation of InGaAs, Si, and Ge nFinFETs based on coupled 3D drift-diffusion/multisubband boltzmann transport equations solver

Jin, Seonghoon, Pham, Anh-Tuan, Woosung Choi,, Nishizawa, Yutaka, Young-Tae Kim,, Keun-Ho Lee,, Youngkwan Park,, Eun Seung Jung,
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2014
Language:
english
DOI:
10.1109/iedm.2014.7047005
File:
PDF, 639 KB
english, 2014
Conversion to is in progress
Conversion to is failed