Nitrogen vs. Phophorus as Implant Species for High-Voltage Lateral RESURF MOSFETs on 4H-SiC
Chatty, K., Banerjee, S., Chow, T.P., Gutmann, Ronald J.Volume:
338-342
Year:
2000
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.338-342.1279
File:
PDF, 314 KB
english, 2000