Technologies for suppressing charge-traps in novel...

Japanese Journal of Applied Physics 2015 / 05 Vol. 54; Iss. 5

Technologies for suppressing charge-traps in novel p-channel Field-MOSFET with thick gate oxide

Miyoshi, Tomoyuki, Oshima, Takayuki, Noguchi, Junji
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Volume:
54
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.54.054102
Date:
May, 2015
File:
PDF, 2.40 MB
english, 2015
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