[ECS 216th ECS Meeting - Vienna, Austria (October 4 - October 9, 2009)] ECS Transactions - Influence of Phosphorus Concentrations in a-SiN:H Gate Layer on Electron Mobility in Thin Film Transistors
Kim, Jun Woo, Sohn, Young-Soo, Choi, Sie-YoungYear:
2009
Language:
english
DOI:
10.1149/1.3203991
File:
PDF, 380 KB
english, 2009