10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary...

Materials Science Forum 2013 / 1 Vol. 740-742

10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor

Dong, Lin, Sun, Guo Sheng, Yu, Jun, Yan, Guo Guo, Zhao, Wan Shun, Wang, Lei, Zhang, Xin He, Li, Xi Guang, Wang, Zhan Guo
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Volume:
740-742
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.740-742.239
Date:
January, 2013
File:
PDF, 1.15 MB
english, 2013
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