Capacitance Transient Spectroscopy of Process-Induced...

Defect and Diffusion Forum 1993 Vol. 103-105

Capacitance Transient Spectroscopy of Process-Induced Defects with Deep Levels in P-Type Silicon

Astrova, E.V., Voronkov, V.B., Lebedev, A.A.
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Volume:
103-105
Year:
1993
Journal:
Defect and Diffusion Forum
DOI:
10.4028/www.scientific.net/DDF.103-105.283
File:
PDF, 272 KB
1993
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