A water-induced high-k yttrium oxide dielectric for fully-solution-processed oxide thin-film transistors
Liu, Ao, Liu, Guoxia, Zhu, Huihui, Meng, You, Song, Huijun, Shin, Byoungchul, Fortunato, Elvira, Martins, Rodrigo, Shan, FukaiLanguage:
english
Journal:
Current Applied Physics
DOI:
10.1016/j.cap.2015.04.015
Date:
April, 2015
File:
PDF, 1.92 MB
english, 2015