[IEEE 2014 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2014.12.15-2014.12.17)] 2014 IEEE International Electron Devices Meeting - 16 nm FinFET High-k/Metal-gate 256-kbit 6T SRAM macros with wordline overdriven assist
Yabuuchi, Makoto, Morimoto, Masao, Tsukamoto, Yasumasa, Tanaka, Shinji, Tanaka, Koji, Tanaka, Miki, Nii, KojiYear:
2014
Language:
english
DOI:
10.1109/iedm.2014.7046972
File:
PDF, 598 KB
english, 2014