Improved Tunnel-FET inverter performance with SiGe/Si heterostructure nanowire TFETs by reduction of ambipolarity
Richter, S., Trellenkamp, S., Schäfer, A., Hartmann, J.M., Bourdelle, K.K., Zhao, Q.T., Mantl, S.Volume:
108
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2015.02.018
Date:
June, 2015
File:
PDF, 2.70 MB
english, 2015