Intersubband spin relaxation reduction and spin lifetime...

Microelectronic Engineering 2015 / 11 Vol. 147

Intersubband spin relaxation reduction and spin lifetime enhancement by strain in SOI structures

Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.
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Volume:
147
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2015.04.072
Date:
November, 2015
File:
PDF, 702 KB
english, 2015
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