Preparation and growth mechanism of β-SiC nanowires by...

Journal of Crystal Growth 2015 / 06 Vol. 419

Preparation and growth mechanism of β-SiC nanowires by using a simplified thermal evaporation method

Liu, Haitao, Huang, Zhaohui, Fang, Minghao, Liu, Yan-gai, Wu, Xiaowen
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Volume:
419
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2015.02.085
Date:
June, 2015
File:
PDF, 1.51 MB
english, 2015
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