Effects of buffer leakage current on breakdown...

Microelectronic Engineering 2015 / 11 Vol. 147

Effects of buffer leakage current on breakdown characteristics in AlGaN/GaN HEMTs with a high-k passivation layer

Hanawa, Hideyuki, Satoh, Yoshiki, Horio, Kazushige
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Volume:
147
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2015.04.064
Date:
November, 2015
File:
PDF, 1.33 MB
english, 2015
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