Self-consistent depth profiling and imaging of GaN-based...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2015 / 04 Vol. 348

Self-consistent depth profiling and imaging of GaN-based transistors using ion microbeams

Redondo-Cubero, A., Corregidor, V., Vázquez, L., Alves, L.C.
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Volume:
348
Language:
english
Journal:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
DOI:
10.1016/j.nimb.2014.11.040
Date:
April, 2015
File:
PDF, 4.24 MB
english, 2015
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