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Factors Influencing the Growth Rate, Doping, and Surface Morphology of the Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H SiC with HCl Additive
Melnychuk, Galyna, Lin, Huang De, Kotamraju, Siva Prasad, Koshka, YaroslavVolume:
1069
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-1069-D05-03
Date:
January, 2008
File:
PDF, 302 KB
english, 2008