Characterization of Obtuse Triangular Defects on 4H-SiC 4°...

Chinese Physics Letters 2013 / 09 Vol. 30; Iss. 9

Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers

Dong, Lin, Sun, Guo-Sheng, Yu, Jun, Zheng, Liu, Liu, Xing-Fang, Zhang, Feng, Yan, Guo-Guo, Li, Xi-Guang, Wang, Zhan-Guo, Yang, Fei
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Volume:
30
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/30/9/096105
Date:
September, 2013
File:
PDF, 1.06 MB
english, 2013
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