Backside optimization for improving avalanche breakdown...

Journal of Semiconductors 2015 / 03 Vol. 36; Iss. 3

Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT

Tian, Xiaoli, Lu, Jiang, Teng, Yuan, Zhang, Wenliang, Lu, Shuojin, Zhu, Yangjun
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Volume:
36
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/36/3/034008
Date:
March, 2015
File:
PDF, 1.59 MB
english, 2015
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