Characterization of MBE Grown Si Doped GaAs Layers on (100)...

Materials Science Forum 1991 Vol. 69

Characterization of MBE Grown Si Doped GaAs Layers on (100) GaAs and Si Substrates by Photoluminescence

Pastrňák, J., Bosacchi, A., Salokatve, A., Varrio, J., Láznicka, M.
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Volume:
69
Year:
1991
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.69.179
File:
PDF, 311 KB
1991
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